MCH3301 no.6431-1/4 features ? low on resistance. ? ultrahigh-speed switching. ? 2.5v drive. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6431a MCH3301 package dimensions unit : mm 2167a [MCH3301] 71002 ts im ta-3604 / 30300ts (koto) ta-2508 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. p-channel silicon mosfet ultrahigh-speed switching applications 1 : gate 2 : source 3 : drain sanyo : mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 2 3 12 3 (bottom view) (top view) preliminary specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 1 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --4 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0 --10 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--500ma 0.9 1.3 s static drain-to-source on-state resistance r ds (on)1 i d =--500ma, v gs =--4v 400 520 m w r ds (on)2 i d =--300ma, v gs =--2.5v 600 840 m w marking : ja continued on next page.
MCH3301 no.6431-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =--10v, f=1mhz 100 pf output capacitance coss v ds =--10v, f=1mhz 60 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 25 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 25 ns turn-off delay time t d (off) see specified test circuit. 27 ns fall time t f see specified test circuit. 32 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--1a 5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1a 1 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--1a 1 nc diode forward voltage v sd i s =--1a, v gs =0 --0.9 --1.5 v switching time test circuit 0 --1 --2 --3 --4 --5 --6 100 200 300 400 500 600 700 800 900 1000 0 --7 --8 --9 --10 r ds (on) -- v gs ta=25 c it00873 0 0 --0.2 --0.4 --0.6 --1.2 --1.0 --1.4 --1.6 --0.2 --0.8 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a v gs = --1.5v i d = --0.3a --0.5a --8.0v --10.0v --6.0v --2.0v --2.5v --4.0v --3.0v it00871 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds = --10v 75 c 25 c ta= --25 c it00872 r ds (on) -- ta it00874 i d = --0.3a, v gs = --2.5v i d = --0.5a, v gs = --4.0v --60 0 100 200 300 400 500 600 700 800 900 1000 --40 --20 0 20 40 60 80 100 120 160 140 static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c pw=10 m s d.c. 1% 0v --4v v in v in p. g 50 w g s i d = --500ma r l =20 w v dd = --10v v out d MCH3301
MCH3301 no.6431-3/4 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 5.0 3.0 4.0 1.0 2.0 4.5 2.5 3.5 0.5 1.5 -- 9 --10 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds = --10v i d = --1a it00879 0 0 20 40 0.2 60 0.4 0.6 80 100 120 0.8 1.0 1.2 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it00881 mounted on a ceramic board(900mm 2 5 0.8mm) a s o drain-to-source voltage, v ds -- v drain current, i d -- a 100ms dc operation 100 m s ta=25 c single pulse mounted on a ceramic board(900mm 2 5 0.8mm) 1ms 10ms i dp = --4a i d = --1a 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 23 57 23 57 2 3 5 --0.1 --1.0 --10 it00880 --0.1 357 --1.0 23 57 23 5 100 5 3 2 7 5 3 2 10 7 5 3 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd = --10v v gs = --4v t d (on) t d (off) t r t f it00877 0 10 -- 2 100 -- 4 -- 6 1000 7 5 3 2 7 5 3 2 --8 --20 --10 --12 --14 --16 --18 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz ciss coss crss it00878 operation in this area is limited by r ds (on). drain current, i d -- a it00875 --0.01 0.1 --0.1 23 57 --1.0 23 57 23 5 1.0 7 5 3 2 5 3 2 forward transfer admittance, ? yfs ? -- s ? y fs ? -- i d v ds = --10v 75 c ta= --25 c it00876 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --0.01 --0.1 --10 --1.0 7 5 3 2 7 5 3 2 7 5 3 2 diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd v gs =0 --25 c 25 c ta=75 c 25 c
MCH3301 no.6431-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2002. specifications and information herein are subject to change without notice. ps
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